| PART |
Description |
Maker |
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| IRFF310 FN1888 |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
From old datasheet system
1.35A 400V 3.600 Ohm N-Channel Power MOSFET
1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| SSP2N60BJ69Z |
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| PHX4N60 |
3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| FQB12N60CTM |
12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 |
From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
|
